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Gate turn-off thyristors (GTO)

Gate turn-off thyristors (GTO)

Production of GTOs commenced in the mid 1980s. A GTO is a thyristor that can be turned off by applying a current to the gate in the reverse direction to that required to turn it on.


GTOs are optimized for low conduction losses. The typical on-off switching frequency is in the range of 200 - 500 hertz for most applications. GTOs are, by nature, relatively slow switches.
Typical transition times from on to off state and vice versa are in a range of 10 - 30 microseconds. All GTOs require protective networks called "snubbers" for turn-on and turn-off. The turn-on snubber circuit, in essence an inductor, limits the rate of current rise. For turn-off, the GTO requires a device that limits the rate of voltage rise, in essence a capacitor.
All ABB GTOs are press-pack devices. They are pressed with a relatively high force onto heat-sinks which also serve as electrical contacts to the power terminals.

Asymmetric GTOs are divided in two categories: Buffer layer and Standard. Buffer layer GTOs have exceptionally low on-state and dynamic losses. Fine pattern types (5SGF) are optimised for fast switching and transparent emitter (5SGT) for low on-state losses. The Standard GTOs have excellent trade-off between on-state and switching losses.

Part Number VDRM(V) VDC(V) ITGQM@ Cs(A) ITGQM@ Cs(µF) Package* (mm)
Standard
5SGA 15F2502 2500 1400 1500 3 75/47
5SGA 20H2501 2500 1400 2000 4 93/63
5SGA 25H2501 2500 1400 2500 6 93/63
5SGA 30J2501 2500 1400 3000 5 108/75
5SGA 06D4502 4500 2800 600 1 58/34
5SGA 20H4502 4500 2200 2000 4 93/63
5SGA 30J4502 4500 2800 3000 6 108/75
5SGA 40L4501 4500 2800 4000 6 120/85

*Note: Pole-piece diameter / Housing height

Part Number VDRM(V) VDC(V) ITGQM@
Cs(A)
ITGQM@ Cs(µF) Package* (mm)
Buffer layer
5SGF 30J4502 4500 3000 3000 3 108/75
5SGF 40L4502 4500 2800 4000 6 120/85

*Note: Pole-piece diameter / Housing height


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