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Integrated gate-commutated thyristors (IGCT)

Integrated gate-commutated thyristors (IGCT)

All ABB IGCTs (Integrated Gate-Commutated Thyristors) are press-pack devices. They are pressed with a relatively high force onto heat-sinks which also serve as electrical contacts to the power terminals. The IGCT's turn-on/off control unit is an integral element of the component. It only requires an external power supply and its control functions are conveniently accessed through optical fiber connections. The device's control power consumption typically ranges from 10 - 100 W.


IGCT 非对称性和反向导通.jpg

Asymmetric IGCT devices are single devices optimized for snubberless turn-off operation. The associated recovery diodes can be chosen from our fast recovery diodes product range.
Reverse conducting IGCTs are monolithical integrated freewheeling diodes. They are optimized for snubberless turn-off conditions

Asymmetric IGCTS





Part number VDRM(V) VDC(V) ITGQM(A) ITAVM(A) Package* (mm) Plecs model
5SHY 35L4520 4500 2800 4000 1700 85/26 XML
5SHY 35L4521 4500 2800 4000 1700 85/26 XML
5SHY 35L4522 4500 2800 4000 2100 85/26 XML
5SHY 40L4511 4500 2800 3600 1430 85/26 XML
5SHY 55L4500 4500 2800 5000 1870 85/26 XML
5SHY 50L5500 5500 3300 3600 1290 85/26 XML
5SHY 42L6500 6500 4000 3800 1290 85/26 XML

*Note: Pole-piece diameter / Housing height

Reverse conducting IGCTS



Part number VDRM(V) VDC(V) ITGQM(A) TAVM/ IFAVM(A) Package* (mm) Plecs model
5SHX 26L4520 4500 2800 2200 1010 85/26 XML
Diode part


390

5SHX 19L6020 5500 3300 1800 840 85/26 XML
Diode part


340

*Note: Pole-piece diameter / Housing height


IGCT 反向阻断.jpg

This symmetrical IGCT is optimized for the current source inverter technology in medium voltage drive and breaker applications.


Part number VDRM(V) VT(V) ITGQM(A) ITAVM/ IFAVM(A) Package* (mm)
5SHZ 11H6500 6500 5.87 1100 490 62.8/13.8


*Note: Pole-piece diameter / Housing height

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